View RFP3055LE_293470.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet November 1999 File Number 4044.3
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
Features
* 11A, 60V * rDS(ON) = 0.107 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
D
Ordering Information
PART NUMBER RFD3055LE RFD3055LESM RFP3055LE PACKAGE TO-251AA TO-252AA TO-220AB BRAND F3055L
G
F3055L FP3055LE
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE DRAIN GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE SOURCE
6-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. 1-888-INTERSIL or 407-727-9207 | Copyright (c) Intersil Corporation 1999
RFD3055LE, RFD3055LESM, RFP3055LE
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFD3055LE, RFD3055LESM, RFP3055LE 60 60 16 11 Refer to Peak Current Curve Refer to UIS Curve 38 0.25 -55 to 175 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS RJC RJA TO-220AB TO-251AA, TO-252AA VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDS = 25V, VGS = 0V, f = 1MHz (Figure 14) VDD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 20, 21) TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC VGS = 16V ID = 8A, VGS = 5V (Figure 11) VDD 30V, ID = 8A, VGS = 4.5V, RGS = 32 (Figures 10, 18, 19) MIN 60 1 TYP 8 105 22 39 9.4 5.2 0.36 350 105 23 MAX 3 1 250 100 0.107 170 92 11.3 6.2 0.43 3.94 62 100 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). SYMBOL VSD trr ISD = 8A ISD = 8A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.25 66 UNITS V ns
6-2
RFD3055LE, RFD3055LESM, RFP3055LE Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 10V 10 VGS = 4.5V
Unless Otherwise Specified
15
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10-5 10-4
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
100
200
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
ID, DRAIN CURRENT (A)
IDM, PEAK CURRENT (A)
100
10
100s
1
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) SINGLE PULSE TJ = MAX RATED TC = 25oC
1ms 10ms
VGS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 100 101
0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 200
10
10-5
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
6-3
RFD3055LE, RFD3055LESM, RFP3055LE Typical Performance Curves
100 IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25oC 10 STARTING TJ = 150oC
Unless Otherwise Specified (Continued)
15 VGS = 10V ID, DRAIN CURRENT (A) 12 VGS = 5V VGS = 4V
9 VGS = 3.5V 6 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 3 TC = 25oC 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V 4
1 0.001 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms)
0
NOTE: Refer to Intersil Application Notes AN9321 and AN9322 FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS
15 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V
150 ID = 3A ID = 11A ID = 5A 120 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC
12 ID, DRAIN CURRENT (A)
9
6
TJ = 25oC
90
3
TJ = 175oC
0 2 3
TJ = -55oC 60 4 5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
150 tr 100 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 4.5V, VDD = 30V, ID = 8A SWITCHING TIME (ns)
2.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.0
1.5
tf 50 td(OFF) td(ON) 0 0 10 20 30 40 50 RGS, GATE TO SOURCE RESISTANCE ()
1.0 VGS = 10V, ID = 11A 0.5 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
6-4
RFD3055LE, RFD3055LESM, RFP3055LE Typical Performance Curves
1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
1.2
ID = 250A
1.0
1.1
0.8
1.0
0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200
0.9 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
VGS , GATE TO SOURCE VOLTAGE (V)
1000 CISS = CGS + CGD C, CAPACITANCE (pF)
10 VDD = 30V 8
100
COSS CDS + CGD
6
4
2
VGS = 0V, f = 1MHz 10 0.1
CRSS = CGD 60
WAVEFORMS IN DESCENDING ORDER: ID = 11A ID = 5A ID = 3A
0 2 4 6 Qg, GATE CHARGE (nC) 8 10
0
1 10 VDS , DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
0V
IAS 0.01
0 tAV
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
6-5
RFD3055LE, RFD3055LESM, RFP3055LE Test Circuits and Waveforms
(Continued)
tON VDS VDS VGS RL
+
tOFF td(OFF) tr tf 90%
td(ON)
90%
DUT RGS VGS
-
VDD
0
10% 90%
10%
VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 18. SWITCHING TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
VDS RL VDD VDS Qg(10) OR Qg(5)
+
Qg(TOT)
VGS
VGS = 20V VGS = 10V FOR L2 DEVICES VGS = 10V VGS = 5V FOR L2 DEVICES
VDD DUT Ig(REF)
VGS VGS = 2V 0 VGS = 1V FOR L2 DEVICES Qg(TH)
Ig(REF) 0
FIGURE 20. GATE CHARGE TEST CIRCUIT
FIGURE 21. GATE CHARGE WAVEFORMS
6-6
RFD3055LE, RFD3055LESM, RFP3055LE PSPICE Electrical Model
.SUBCKT RFD3055LE 2 1 3 ;
CA 12 8 3.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.25e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD
10
rev 1/30/95
LDRAIN DPLCAP 5 RLDRAIN DBREAK 11 + 17 EBREAK 18 DRAIN 2 RSLC1 51 ESLC 50
RSLC2
5 51
ESG 6 8 + LGATE GATE 1 RLGATE CIN EVTEMP RGATE + 18 22 9 20 EVTHRES + 19 8 6
IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 5.42e-9 LSOURCE 3 7 2.57e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.7e-2 RGATE 9 20 3.37 RLDRAIN 2 5 10 RLGATE 1 9 54.2 RLSOURCE 3 7 25.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.50e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
MSTRO LSOURCE 8 RSOURCE RLSOURCE 7 SOURCE 3
S1A 12 S1B CA 13 + EGS 6 8 13 8
S2A 14 13 S2B CB + EDS 5 8 14 IT 15 17
-
-
VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))} .MODEL DBODYMOD D (IS = 1.75e-13 RS = 1.75e-2 TRS1 = 1e-4 TRS2 = 5e-6 CJO = 5.9e-10 TT = 5.45e-8 N = 1.03 M = 0.6) .MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6) .MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81) .MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37) .MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.78 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0) .MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5) .MODEL RSLCMOD RES (TC1 = 0 TC2 = 0) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6) .MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2BMOD VSWITCH (RON = 1e-5 .ENDS ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = -4 VOFF= -2.5) VON = -2.5 VOFF= -4) VON = -0.5 VOFF= 0) VON = 0 VOFF= -0.5)
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
6-7
+
-
EBREAK 11 7 17 18 67.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1
RDRAIN 21 16
DBODY
MWEAK MMED
RBREAK 18 RVTEMP 19
VBAT +
8 22 RVTHRES
RFD3055LE, RFD3055LESM, RFP3055LE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
6-8

▲Up To Search▲

Price & Availability of RFP3055LE

	To Download RFP3055LE Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .